Highly sensitive photodetector based on two-dimensional ferroelectric semiconducting ?-InSe/graphene heterostructure
نویسندگان
چکیده
2D ferroelectric \{beta}-InSe/graphene heterostructure was fabricated by mechanical exfoliation, and the carrier dynamics crossing interface has been systematically investigated Raman, photoluminescence transient absorption measurements. Due to efficient interfacial photo excited electron transfer photogating effect from trapped holes, devices demonstrate superior performance with maximum responsivity of 2.12*10e4 A/W, detectivity 1.73*10e14 Jones fast response time (241 us) under {\lambda} = 532 nm laser illumination. Furthermore, responses influenced polarization field are investigated. Our work confirms as an outstanding material platform for sensitive optoelectronic application.
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2023
ISSN: ['1882-0786', '1882-0778']
DOI: https://doi.org/10.35848/1882-0786/acb524